IGBT CM200DU-12NFH

Overview of Mitsubishi CM200DU-12NFH IGBT Module

The Mitsubishi CM200DU-12NFH is a high-power insulated gate bipolar transistor (IGBT) module optimized for high-frequency switching applications such as induction heating, gradient amplifiers, and power supplies. It features two IGBT elements in a single insulated pack designed for efficient power conversion at switching frequencies between 30 kHz and 60 kHz.

Key Features of Mitsubishi CM200DU-12NFH

• Collector Current (IC): 200 A
• Collector-Emitter Voltage (VCES): 600 V
• High-frequency Switching: Optimized for 30 kHz to 60 kHz frequency range
• Insulated Module: Electrical isolation for safety and reliability
• Package Type: 2-IGBT elements in a pack for half-bridge configurations
• Maximum Operating Temperature: 150°C
• Low Power Loss: Approximately 30% lower power loss during high-frequency operation
• Robust Thermal Management: Copper baseplate for efficient heat dissipation
• Mounting: Standard mounting holes with M5 nuts

Technical Specifications of CM200DU-12NFH

Applications / Use Case

The CM200DU-12NFH IGBT module is commonly used in high-frequency power switching applications like induction heating equipment, power supplies, and gradient amplifiers. Its design focuses on minimizing power loss, enhancing switching speed, and managing heat efficiently for industrial uses.

Manufactured by Mitsubishi Electric, this IGBT module offers a reliable and efficient solution for demanding high-frequency power electronics applications.