CM600HU-12F

Overview of Mitsubishi CM600HU-12F

The Mitsubishi CM600HU-12F is a high-power insulated-gate bipolar transistor (IGBT) module designed for power switching applications requiring high efficiency and reliability. It features a single IGBT transistor paired with a reverse-connected super-fast recovery freewheel diode, ideal for use in industrial inverters, servo drives, and other high power electronic devices.

Key Features

• Collector Current (IC): 600 A continuous (Tc=25°C)
• Collector-Emitter Voltage (VCES): 600 V
• Peak Collector Current (ICM): 1200 A (Tc ≤ 150°C)
• Gate-Emitter Voltage (VGES): ±20 V
• Maximum Collector Dissipation (Pc): 1420 W (Tc=25°C)
• Isolation Voltage (Viso): 2500 V AC for 1 minute
• Junction Temperature (Tj): -40 to 150 °C
• Storage Temperature (Tstg): -40 to 125 °C
• Mounting Torque: M8 terminals, 3.5 - 4.5 N·m
• Package Type: Single element, insulated package
• Weight: Approx. 450 g

Electrical and Switching Characteristics

• Input Capacitance (Cies): Typical 160 nF
• Output Capacitance (Coes): Typical 11 nF
• Reverse Transfer Capacitance (Cres): Typical 6 nF
• Turn-on Delay Time (td(on)): Max 600 ns
• Turn-on Rise Time (tr): Max 400 ns
• Turn-off Delay Time (td(off)): Max 900 ns
• Turn-off Fall Time (tf): Max 250 ns
• Diode Reverse Recovery Time (trr): Fast recovery typical for switching applications

Applications

The Mitsubishi CM600HU-12F IGBT module is suited for a wide range of power switching tasks in industrial inverters, motor drives, power supplies, and servo systems. Its robust thermal and electrical ratings make it reliable for high power and high frequency switching applications.