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CM400DY-12NF

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Overview of Mitsubishi CM400DY-12NF

The Mitsubishi CM400DY-12NF is a high-power insulated gate bipolar transistor (IGBT) module designed for use in high power switching applications such as inverters, servo controls, and industrial motor drives. It features a dual IGBT configuration in a half-bridge setup with built-in anti-parallel diodes, offering efficient switching performance.

Key Features

  • Transistor Type: IGBT + Anti-Parallel Diode
  • Configuration: Dual IGBT in half-bridge
  • Maximum Collector-Emitter Voltage (VCES): 600 V
  • Maximum Collector Current (IC): 400 A at 25°C
  • Maximum Gate-Emitter Voltage (VGE): ±20 V
  • Collector-Emitter Saturation Voltage (VCEsat): Approx. 1.7 V at 25°C
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): Approx. 200 ns
  • Total Gate Charge (Qg): Approx. 1600 nC
  • Package Type: Insulated module for easy mounting and heat dissipation
  • Thermal Resistance (Junction to Case): Approx. 0.11 °C/W

Technical Specifications

Model CM400DY-12NF
Type IGBT Dual Module (Half-Bridge)
Collector-Emitter Voltage 600 V
Collector Current 400 A (Continuous at 25°C)
Gate-Emitter Voltage ±20 V
Collector-Emitter Saturation Voltage 1.7 V (typical)
Junction Temperature Range -40 to 150 °C
Rise Time 200 ns (typical)
Gate Charge 1600 nC (typical)
Package Insulated module with mounting holes
Applications Inverters, servo drives, industrial motor controls

Applications / Use Case

The CM400DY-12NF IGBT module is widely used in industrial motor drives, power inverters, uninterruptible power supplies (UPS), and servo control systems. It is designed to provide efficient and reliable high-speed switching performance in demanding industrial environments.

CM400DY-12NF

$0.00

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Does it come with a warranty?

Yes, All products are offered wth 1-Year warranty.

What is the condition of the product?

All products sold are New & Unused.

How fast is shipping?

All products are delivered within 2-8 business days depending on our stock location.

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